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NTP5864N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
58
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 60 V
T J = 25 ° C
1.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
2.0
? 10
4.0
V
mV/ ° C
Drain ? to ? Source On Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 20 A
V DS = 15 V, I D = 20 A
10.2
10
12.4
m W
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
1680
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
189
124
Total Gate Charge
Q G(TOT)
31
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 48 V,
I D = 20 A
2.0
7.3
10
Gate Resistance
R g
0.5
W
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
t d(ON)
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 48 V,
I D = 20 A, R G = 2.5 W
6.4
18
4.6
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 40 A
T J = 25 ° C
T J = 125 ° C
0.94
0.84
1.2
V
Reverse Recovery Time
t RR
24
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dI SD /dt = 100 A/ m s,
I S = 20 A
16
7.9
Reverse Recovery Charge
Q RR
20
nC
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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